发明名称 |
Method for manufacturing bonded wafer |
摘要 |
A method for manufacturing a bonded wafer including the steps of: implanting at least one gas ion of a hydrogen ion and a rare gas ion into a bond wafer from a surface thereof to form an ion-implanted layer; bonding the ion-implanted surface of the bond wafer to a surface of a base wafer directly or through an oxide film; thereafter delaminating the bond wafer at the ion-implanted layer to prepare the bonded wafer having a silicon thin film formed on the base wafer; and performing a flattening heat treatment on the bonded wafer under an atmosphere containing hydrogen or hydrogen chloride, wherein a dopant gas is added into the atmosphere of the flattening heat treatment to perform the heat treatment, the dopant gas having the same conductivity type as a dopant contained in the silicon thin film. |
申请公布号 |
US8389382(B2) |
申请公布日期 |
2013.03.05 |
申请号 |
US200913130681 |
申请日期 |
2009.10.15 |
申请人 |
OKA SATOSHI;NOTO NOBUHIKO;SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
OKA SATOSHI;NOTO NOBUHIKO |
分类号 |
H01L21/30;H01L21/46 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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