发明名称 |
Method and apparatus for forming silicon oxide film |
摘要 |
A method of forming a silicon oxide film on silicon exposed on a surface of a workpiece includes mounting the workpiece on a mounting table in a processing chamber; generating plasma of a process gas containing oxygen by supplying the process gas into the processing chamber; applying a bias to the workpiece by supplying high-frequency power to the mounting table; and forming the silicon oxide film by applying the plasma to the biased workpiece and oxidizing the silicon. A ratio of oxygen in the process gas is set to be in the range of 0.1% to 10%. A pressure in the processing chamber is set to be in the range of 1.3 Pa to 266.6 Pa upon forming the silicon oxide film. An output of the high-frequency power is set to be in the range of 0.14 W/cm2 to 2.13 W/cm2 per unit area of the workpiece. |
申请公布号 |
US8389420(B2) |
申请公布日期 |
2013.03.05 |
申请号 |
US201113074062 |
申请日期 |
2011.03.29 |
申请人 |
KABE YOSHIRO;NAKAMURA HIDEO;KITAGAWA JUNICHI;TOKYO ELECTRON LIMITED |
发明人 |
KABE YOSHIRO;NAKAMURA HIDEO;KITAGAWA JUNICHI |
分类号 |
H01L21/31 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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