发明名称 Interconnection substrate having first and second insulating films with an adhesion enhancing layer therebetween
摘要 An interconnection substrate including: a first insulating film made of a silicon compound, an adhesion enhancing layer formed on the first insulating film, and a second insulting film made of a silicon compound and formed on the adhesion enhancing layer, wherein the first insulating film and the second insulating film are combined together with a component having a structure represented by General Formula (1) described below: Si—CXHY—Si  General Formula (1) where y is equal to 2x and is an even integer.
申请公布号 US8390099(B2) 申请公布日期 2013.03.05
申请号 US20100862140 申请日期 2010.08.24
申请人 OZAKI SHIROU;NAKATA YOSHIHIRO;IMADA TADAHIRO;KOBAYASHI YASUSHI;FUJITSU LIMITED 发明人 OZAKI SHIROU;NAKATA YOSHIHIRO;IMADA TADAHIRO;KOBAYASHI YASUSHI
分类号 H01L23/58 主分类号 H01L23/58
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