发明名称 |
Interconnection substrate having first and second insulating films with an adhesion enhancing layer therebetween |
摘要 |
An interconnection substrate including: a first insulating film made of a silicon compound, an adhesion enhancing layer formed on the first insulating film, and a second insulting film made of a silicon compound and formed on the adhesion enhancing layer, wherein the first insulating film and the second insulating film are combined together with a component having a structure represented by General Formula (1) described below: Si—CXHY—Si  General Formula (1) where y is equal to 2x and is an even integer. |
申请公布号 |
US8390099(B2) |
申请公布日期 |
2013.03.05 |
申请号 |
US20100862140 |
申请日期 |
2010.08.24 |
申请人 |
OZAKI SHIROU;NAKATA YOSHIHIRO;IMADA TADAHIRO;KOBAYASHI YASUSHI;FUJITSU LIMITED |
发明人 |
OZAKI SHIROU;NAKATA YOSHIHIRO;IMADA TADAHIRO;KOBAYASHI YASUSHI |
分类号 |
H01L23/58 |
主分类号 |
H01L23/58 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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