发明名称 |
Transistor with dopant-bearing metal in source and drain |
摘要 |
A transistor and method of manufacturing thereof. A gate dielectric and gate are formed over a workpiece, and the source and drain regions of a transistor are recessed. The recesses are filled with a dopant-bearing metal, and a low-temperature anneal process is used to form doped regions within the workpiece adjacent the dopant-bearing metal regions. A transistor having a small effective oxide thickness and a well-controlled junction depth is formed. |
申请公布号 |
US8390080(B2) |
申请公布日期 |
2013.03.05 |
申请号 |
US20080245526 |
申请日期 |
2008.10.03 |
申请人 |
LI HONG-JYH;CHAUDHARY NIRMAL;INFINEON TECHNOLOGIES AG |
发明人 |
LI HONG-JYH;CHAUDHARY NIRMAL |
分类号 |
H01L21/02;H01L21/225;H01L21/28;H01L21/336;H01L21/8242;H01L29/51;H01L29/76;H01L29/78;H01L29/786 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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