发明名称 |
Electrostatic discharge protection device and method of fabricating same |
摘要 |
A silicon control rectifier and an electrostatic discharge protection device of an integrated circuit including the silicon control rectifier. The silicon control rectifier includes a silicon body formed in a silicon layer in direct physical contact with a buried oxide layer of a silicon-on-insulator substrate, a top surface of the silicon layer defining a horizontal plane; and an anode of the silicon control rectifier formed in a first region of the silicon body and a cathode of the silicon control rectifier formed in an opposite second region of the silicon body, wherein a path of current flow between the anode and the cathode is only in a single horizontal direction parallel to the horizontal plane. |
申请公布号 |
US8390068(B2) |
申请公布日期 |
2013.03.05 |
申请号 |
US201213361051 |
申请日期 |
2012.01.30 |
申请人 |
GAUTHIER, JR. ROBERT J.;LI JUNJUN;MITRA SOUVICK;MOUSA MAHMOUD A.;PUTNAM CHRISTOPHER STEPHEN;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GAUTHIER, JR. ROBERT J.;LI JUNJUN;MITRA SOUVICK;MOUSA MAHMOUD A.;PUTNAM CHRISTOPHER STEPHEN |
分类号 |
H01L27/01;H01L23/62;H01L29/74 |
主分类号 |
H01L27/01 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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