发明名称 Dual gate lateral double-diffused MOSFET (LDMOS) transistor
摘要 Method and apparatus for providing a lateral double-diffused MOSFET (LDMOS) transistor having a dual gate. The dual gate includes a first gate and a second gate. The first gate includes a first oxide layer formed over a substrate, and the second gate includes a second oxide layer formed over the substrate. The first gate is located a pre-determined distance from the second gate. A digitally implemented voltage regulator is also provided that includes a switching circuit having a dual gate LDMOS transistor.
申请公布号 US8390057(B1) 申请公布日期 2013.03.05
申请号 US20080174471 申请日期 2008.07.16
申请人 ZUNIGA MARCO A.;YOU BUDONG;VOLTERRA SEMICONDUCTOR CORPORATION 发明人 ZUNIGA MARCO A.;YOU BUDONG
分类号 H01L29/72 主分类号 H01L29/72
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