发明名称 |
Dual gate lateral double-diffused MOSFET (LDMOS) transistor |
摘要 |
Method and apparatus for providing a lateral double-diffused MOSFET (LDMOS) transistor having a dual gate. The dual gate includes a first gate and a second gate. The first gate includes a first oxide layer formed over a substrate, and the second gate includes a second oxide layer formed over the substrate. The first gate is located a pre-determined distance from the second gate. A digitally implemented voltage regulator is also provided that includes a switching circuit having a dual gate LDMOS transistor. |
申请公布号 |
US8390057(B1) |
申请公布日期 |
2013.03.05 |
申请号 |
US20080174471 |
申请日期 |
2008.07.16 |
申请人 |
ZUNIGA MARCO A.;YOU BUDONG;VOLTERRA SEMICONDUCTOR CORPORATION |
发明人 |
ZUNIGA MARCO A.;YOU BUDONG |
分类号 |
H01L29/72 |
主分类号 |
H01L29/72 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|