发明名称 |
Pattern forming method |
摘要 |
A pattern forming method which uses a positive resist composition comprises: (A) a fluorine-free resin capable of increasing its solubility in an alkaline developer under action of an acid; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (C) a fluorine-containing resin having at least one group selected from the group consisting of (X) an alkali-soluble group, (XI) a group capable of decomposing under action of an alkali developer and increasing solubility of the resin (C) in an alkaline developer and (XII) a group capable of decomposing under action of an acid and increasing solubility of the resin (C) in an alkaline developer; and (D) a solvent, the method comprising: (i) a step of applying the positive resist composition to a substrate to form a resist coating; (ii) a step of exposing the resist coating to light via an immersion liquid; (iii) a step of removing the immersion liquid remaining on the resist coating; (iv) a step of heating the resist coating; and (v) a step of developing the resist coating. |
申请公布号 |
US8389200(B2) |
申请公布日期 |
2013.03.05 |
申请号 |
US20090618365 |
申请日期 |
2009.11.13 |
申请人 |
KANNA SHINICHI;INABE HARUKI;KANDA HIROMI;FUJIFILM CORPORATION |
发明人 |
KANNA SHINICHI;INABE HARUKI;KANDA HIROMI |
分类号 |
G03F7/00;G03F7/004;G03F7/20;G03F7/40 |
主分类号 |
G03F7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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