发明名称 |
Semiconductor memory having both volatile and non-volatile functionality and method of operating |
摘要 |
Semiconductor memory having both volatile and non-volatile modes and methods of operation. A semiconductor memory cell includes a substrate, a floating body to store data in volatile memory and a floating gate or trapping layer configured to receive transfer of data stored by the volatile memory and store the data as nonvolatile memory in the floating gate or trapping layer upon interruption of power to the memory cell.
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申请公布号 |
US8391066(B2) |
申请公布日期 |
2013.03.05 |
申请号 |
US201113231188 |
申请日期 |
2011.09.13 |
申请人 |
WIDJAJA YUNIARTO;ZENO SEMICONDUCTOR, INC. |
发明人 |
WIDJAJA YUNIARTO |
分类号 |
G11C14/00 |
主分类号 |
G11C14/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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