发明名称 Method for making a stressed structure designed to be dissociated
摘要 A method of making a complex microelectronic structure by assembling two substrates through two respective linking surfaces, the structure being designed to be dissociated at a separation zone. Prior to assembly, in producing a state difference in the tangential stresses between the two surfaces to be assembled, the state difference is selected so as to produce in the assembled structure a predetermined stress state at the time of dissociation.
申请公布号 US8389379(B2) 申请公布日期 2013.03.05
申请号 US20090628772 申请日期 2009.12.01
申请人 FOURNEL FRANCK;MORICEAU HUBERT;LAGAHE CHRISTELLE;COMMISSARIAT A L'ENERGIE ATOMIQUE 发明人 FOURNEL FRANCK;MORICEAU HUBERT;LAGAHE CHRISTELLE
分类号 H01L21/30;H01L21/304;H01L21/762 主分类号 H01L21/30
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