发明名称 |
Method for making a stressed structure designed to be dissociated |
摘要 |
A method of making a complex microelectronic structure by assembling two substrates through two respective linking surfaces, the structure being designed to be dissociated at a separation zone. Prior to assembly, in producing a state difference in the tangential stresses between the two surfaces to be assembled, the state difference is selected so as to produce in the assembled structure a predetermined stress state at the time of dissociation. |
申请公布号 |
US8389379(B2) |
申请公布日期 |
2013.03.05 |
申请号 |
US20090628772 |
申请日期 |
2009.12.01 |
申请人 |
FOURNEL FRANCK;MORICEAU HUBERT;LAGAHE CHRISTELLE;COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
FOURNEL FRANCK;MORICEAU HUBERT;LAGAHE CHRISTELLE |
分类号 |
H01L21/30;H01L21/304;H01L21/762 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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