发明名称 |
Trenched MOSFETS with improved gate-drain (GD) clamp diodes |
摘要 |
A method for operating a semiconductor power device by in a forward conducting mode instead of an avalanche mode during a voltage fly-back during an inductive switch operation for absorbing a transient energy with less stress. The method includes a step of clamping the semiconductor power device with a Zener diode connected between a gate metal and a drain metal of the semiconductor power device to function as a gate-drain (GD) clamp diode with the GD clamp diode having an avalanche voltage lower than a source/drain avalanche voltage of the semiconductor power device whereby as the voltage fly-back inducing a drain voltage increase rapidly reaching the avalanche voltage of the GD clamp diode for generating the forward conducting mode. |
申请公布号 |
US8389354(B2) |
申请公布日期 |
2013.03.05 |
申请号 |
US20090383247 |
申请日期 |
2009.03.19 |
申请人 |
HSHIEH FWU-IUAN;FORCE-MOS TECHNOLOGY CORPORATION |
发明人 |
HSHIEH FWU-IUAN |
分类号 |
H01L21/8234 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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