发明名称 |
Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device |
摘要 |
A method of fabricating a group-III nitride semiconductor laser device includes: preparing a substrate of a hexagonal group-III nitride semiconductor, where the substrate has a semipolar primary surface; forming a substrate product having a laser structure, an anode electrode and a cathode electrode, where the laser structure includes the substrate and a semiconductor region, and where the semiconductor region is formed on the semipolar primary surface; scribing a first surface of the substrate product in part in a direction of the a-axis of the hexagonal group-III nitride semiconductor; and carrying out breakup of the substrate product by press against a second surface of the substrate product, to form another substrate product and a laser bar. |
申请公布号 |
US8389312(B2) |
申请公布日期 |
2013.03.05 |
申请号 |
US201213367846 |
申请日期 |
2012.02.07 |
申请人 |
YOSHIZUMI YUSUKE;TAKAGI SHIMPEI;IKEGAMI TAKATOSHI;UENO MASAKI;KATAYAMA KOJI;SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
YOSHIZUMI YUSUKE;TAKAGI SHIMPEI;IKEGAMI TAKATOSHI;UENO MASAKI;KATAYAMA KOJI |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|