发明名称 |
METHOD FOR FORMING METAL LINE |
摘要 |
PURPOSE: A method for forming a metal line is provided to prevent impact on a metal oxide layer in an etching process for a multi-metal layer made of Cu and metal oxide. CONSTITUTION: A metal oxide layer is formed on a substrate. A copper metal layer is formed on the metal oxide layer. A photoresist material is selectively left on the copper metal layer. An upper copper metal layer is etched by using etching solution which includes hydrogen peroxide, azole compound, phosphonic acid derivative, and water.
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申请公布号 |
KR20130021321(A) |
申请公布日期 |
2013.03.05 |
申请号 |
KR20120080798 |
申请日期 |
2012.07.24 |
申请人 |
DONGWOO FINE-CHEM CO., LTD. |
发明人 |
LEE, HYUN KYU;LEE, SUK;JUNG, KYUNG SUB |
分类号 |
G02F1/1368;C09K13/00 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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