发明名称 |
Method for producing a microfabricated in-plane radio frequency (RF) capacitor |
摘要 |
The present invention is a method for producing a capacitor. The method includes applying a dielectric substance (ex.—silicon nitride) to a first gold seed layer, the first gold seed layer being formed on a wafer. A second gold seed layer is formed upon the dielectric substance and first gold seed layer. Gold is electroplated into a photoresist to form a first set of 3-D capacitor elements on the second gold seed layer. A first copper layer is electroplated onto the second gold seed layer. Gold is electroplated into a photoresist to form a second set of 3-D capacitor elements, the second set of 3-D elements being formed at least partially within the first copper layer and being connected to the first set of 3-D elements. A second copper layer is electroplated onto the first copper layer. Then, both copper layers are removed to provide (ex.—form) the capacitor.
|
申请公布号 |
US8389374(B1) |
申请公布日期 |
2013.03.05 |
申请号 |
US20100860259 |
申请日期 |
2010.08.20 |
申请人 |
LOWER NATHAN P.;MULBROOK MARK M.;PALANDECH ROBERT L.;ROCKWELL COLLINS, INC. |
发明人 |
LOWER NATHAN P.;MULBROOK MARK M.;PALANDECH ROBERT L. |
分类号 |
H01L31/119;H01L29/00 |
主分类号 |
H01L31/119 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|