发明名称 Photoelectric conversion device, image sensing system, and method of manufacturing photoelectric conversion device
摘要 A photoelectric conversion device having a pixel array region in which a plurality of pixels each including a photoelectric converter are arrayed, and a peripheral region arranged around the pixel array region, the device comprising a multilayer wiring structure which is arranged on a semiconductor substrate, and includes wiring layers in the peripheral region more than wiring layers in the pixel array region, and a plurality of interlayer lenses which is arranged on the multilayer wiring structure in the pixel array region, wherein the plurality of interlayer lenses each includes a first insulator, and a second insulator arranged to cover the first insulator, and having a refractive index higher than the first insulator, and wherein the first insulator in each of the plurality of interlayer lenses, and an uppermost interlayer insulating film in the peripheral region in the multilayer wiring structure are made of an identical material.
申请公布号 US8389923(B2) 申请公布日期 2013.03.05
申请号 US20100853547 申请日期 2010.08.10
申请人 NARUSE HIROAKI;MISHIMA RYUICHI;CANON KABUSHIKI KAISHA 发明人 NARUSE HIROAKI;MISHIMA RYUICHI
分类号 H01L27/00;H01L31/00;H01L31/0232 主分类号 H01L27/00
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