发明名称 |
Finishing method for a silicon on insulator substrate |
摘要 |
The invention relates to a finishing method for a silicon-on-insulator (SOI) substrate that includes an oxide layer buried between an active silicon layer and a support layer of silicon. The method includes applying the following steps in succession: a first rapid thermal annealing (RTA) of the SOI substrate; a sacrificial oxidation of the active silicon layer of the substrate conducted to remove a first oxide thickness; a second RTA of the substrate; and a second sacrificial oxidation of the active silicon layer conducted to remove a second oxide thickness that is thinner than the first oxide thickness. |
申请公布号 |
US8389412(B2) |
申请公布日期 |
2013.03.05 |
申请号 |
US201013257164 |
申请日期 |
2010.03.17 |
申请人 |
SCHWARZENBACH WALTER;KERDILES SEBASTIEN;REYNAUD PATRICK;ECARNOT LUDOVIC;NEYRET ERIC;SOITEC |
发明人 |
SCHWARZENBACH WALTER;KERDILES SEBASTIEN;REYNAUD PATRICK;ECARNOT LUDOVIC;NEYRET ERIC |
分类号 |
H01L21/311 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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