发明名称 |
Method for fracturing semiconductor substrate, method for fracturing solar cell, and the solar cell |
摘要 |
In accordance with the present invention, the dividing grooves 8 are formed so as not to be parallel to cleavage planes of the semiconductor substrate 1, and the semiconductor substrate 1 is bent along the dividing grooves 8, whereby the semiconductor substrate 1 is fractured along the dividing grooves 8. |
申请公布号 |
US8389320(B2) |
申请公布日期 |
2013.03.05 |
申请号 |
US20080046534 |
申请日期 |
2008.03.12 |
申请人 |
KANNOU HIROYUKI;SHIMA MASAKI;SANYO ELECTRIC CO., LTD. |
发明人 |
KANNOU HIROYUKI;SHIMA MASAKI |
分类号 |
H01L21/00;H01L31/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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