Bonding wire for semiconductor devices

摘要

A bonding wire for semiconductor devices includes a core member formed of an electrically-conductive metal, and a skin layer mainly composed of a face-centered cubic metal different from the core member and formed thereon. An orientation ratio of <100> orientations in crystalline orientations in a wire lengthwise direction at a crystal face of a surface of the skin layer is greater than or equal to 50%, and the <100> orientations have an angular difference relative to the wire lengthwise direction. The angular difference is within 15 degrees.