| 摘要 |
The present invention provides a deposition method of a multilayered structure composed of a III group nitride compound semiconductor having good crystallinity on a substrate. The multilayered structure comprises at least a buffer layer and an underlying layer from the substrate side, and the buffer layer and the underlying layer are formed by a sputtering method. A deposition temperature of the buffer layer is adjusted to a temperature lower than a deposition temperature of the underlying layer, or the thickness of the buffer layer is adjusted to 5 nm to 500 nm. Furthermore, the multilayered structure comprises at least an underlying layer and a light-emissive layer from the substrate side and the underlying layer is formed by a sputtering method, and the method comprises the step of forming the light-emissive layer by a metal-organic chemical vapor deposition (MOCVD method). |
