发明名称 |
Semiconductor device and method for manufacturing the same in which variations are reduced and characteristics are improved |
摘要 |
A method of manufacturing N-type MOSFET includes: implanting a p-type dopant into in a surface layer of a semiconductor substrate to form a channel region; forming a gate insulating film including High-k material and a gate electrode on said channel region; implanting a p-type dopant into both ends of said channel region in an inner portion of said semiconductor substrate to form halo regions; implanting a p-type dopant into both ends of said channel region in a surface layer of said semiconductor substrate to form extension regions. One of said step of forming said channel region and said step of forming halo regions includes: implanting C into one of said channel region and said halo regions. An inclusion amount of said High-k material is an amount that increase of a threshold voltage caused by said High-k material being included in said gate insulating film compensates for decrease of said threshold voltage caused by said C being implanted. |
申请公布号 |
US8389350(B2) |
申请公布日期 |
2013.03.05 |
申请号 |
US201113178248 |
申请日期 |
2011.07.07 |
申请人 |
SAKAKIDANI AKIHITO;IMAI KIYOTAKA;RENESAS ELECTRONICS CORPORATION |
发明人 |
SAKAKIDANI AKIHITO;IMAI KIYOTAKA |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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