MEMORY DEVICE EMPLOYING BAD PAGE MANAGEMENT

摘要

PURPOSE: A memory device for managing a faulty page is provided to eliminate the need to include a redundancy cell and additional redundancy cells by using a second memory block having unused memory cells for relieving faulty cells of a first memory block. CONSTITUTION: A memory cell array includes memory cells arranged in a row with pages and is composed of first and second memory blocks in which the memory cells are arranged. A faulty page map stores faulty page location information indicating the fault of the pages of the first memory block as one bit. A faulty page address of the first memory block is replaced with a pass page address of the second memory block according to the faulty page location information. The faulty page map indicates the faulty page location information by using an anti-fuse circuit. The faulty page address of the first memory block is replaced in reverse order from a maximum page address of the second memory block. [Reference numerals] (AA) Address increasing direction