发明名称 |
Thin film transistor, display device, and electronic device |
摘要 |
The present invention provides a thin film transistor using an oxide semiconductor as a channel, controlling threshold voltage to a positive direction, and realizing improved reliability. The thin film transistor includes: a gate electrode; a pair of source/drain electrodes; an oxide semiconductor layer provided between the gate electrode and the pair of source/drain electrodes and forming a channel; a first insulating film as a gate insulating film provided on the gate electrode side of the oxide semiconductor layer; and a second insulating film provided on the pair of source/drain electrodes side of the oxide semiconductor layer. The first insulating film and/or the second insulating film contain/contains fluorine. |
申请公布号 |
US8389991(B2) |
申请公布日期 |
2013.03.05 |
申请号 |
US20100951683 |
申请日期 |
2010.11.22 |
申请人 |
MOROSAWA NARIHIRO;FUKUMOTO ERI;TERAI YASUHIRO;SONY CORPORATION |
发明人 |
MOROSAWA NARIHIRO;FUKUMOTO ERI;TERAI YASUHIRO |
分类号 |
H01L29/04;H01L31/036;H01L31/0376;H01L31/20 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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