发明名称 Semiconductor device providing a first electrical conductor and a second electrical conductor in one through hole and method for manufacturing the same
摘要 A semiconductor device 100 is provided with a multiplex through plug 111 that fills an opening extending through the silicon substrate 101. The multiplex through plugs 111 comprises a column-shaped and solid first through electrode 103, a first insulating film 105 that covers the cylindrical face of the first through electrode 103, a second through electrode 107 that covers the cylindrical face of the first insulating film 105 and a second insulating film 109 that covers the cylindrical face of the second through electrode 107, and these have a common central axis. The upper cross sections of the first insulating film 105, the second through electrode 107 and the second insulating film 109 are annular-shaped.
申请公布号 US8390098(B2) 申请公布日期 2013.03.05
申请号 US201113102749 申请日期 2011.05.06
申请人 MATSUI SATOSHI;RENESAS ELECTRONICS CORPORATION 发明人 MATSUI SATOSHI
分类号 H01L29/40 主分类号 H01L29/40
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