| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a silicon carbide deposition device and a silicon carbide removal method capable of accurately and in-situ removing a deposit containing the silicon carbide and adhering into a deposition chamber after forming a silicon carbide film. <P>SOLUTION: The silicon carbide deposition device comprises: fluorine-containing gas supply means 13 which supplies a fluorine-containing gas; oxygen-containing gas supply means 14 which supplies an oxygen-containing gas; plasma generation means 15 which is connected to the fluorine-containing gas supply means 13 and the oxygen-containing gas supply means 14, turns the fluorine-containing gas and the oxygen-containing gas into a plasma, and supplies the fluorine-containing gas and oxygen-containing gas turned into the plasma into a deposition chamber 11; exhaust gas analysis means 19 which analyzes an exhaust gas from the deposition chamber 11; and control means 21 which controls the fluorine-containing gas supply means 13, oxygen-containing gas supply means 14, and plasma generation means 15 on the basis of the analysis result of the exhaust gas analysis means 19. <P>COPYRIGHT: (C)2013,JPO&INPIT |
