发明名称 |
OHMIC ELECTRODE AND FORMATION METHOD THEREOF |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a formation method of an ohmic electrode capable of removing a resist film used to form a contact hole using an etching liquid containing sulfuric acid. <P>SOLUTION: A formation method of an ohmic electrode comprises: a laminated electrode part formation step of forming a laminated electrode part 2; an annealing step of heat-treating the laminated electrode part 2; a covering electrode part formation step of forming a covering electrode part 4 by covering the heat-treated laminated electrode part 2 with a covering part 3; an insulator film formation step of forming an insulator film 5 on a surface of a semiconductor layer 1 so as to cover the covering electrode part 4; a resist film formation step of patterning a resist film 6 in which an opening 7 is formed corresponding to the covering electrode part 4 on a surface of the insulator film 5; an exposure step of exposing the covering electrode part 4 by removing the insulator film 5 exposed from the opening 7 of the resist film 6; and a resist film removal step of removing the resist film 6 using an etching liquid containing sulfuric acid. A material of the covering part 3 is gold or platinum. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2013045841(A) |
申请公布日期 |
2013.03.04 |
申请号 |
JP20110181658 |
申请日期 |
2011.08.23 |
申请人 |
TOYOTA CENTRAL R&D LABS INC |
发明人 |
KATSUNO TAKASHI;KIGAMI MASAHITO;ICHIKAWA TADASHI;ISHII EIKO |
分类号 |
H01L21/28;H01L21/338;H01L29/778;H01L29/812 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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