| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor laser element having a structure capable of reducing malfunction due to Catastrophic Optical Damage (COD) and reducing deterioration in heat dissipation capability. <P>SOLUTION: A group III semiconductor laser element 11 comprises: first and second torn faces 27, 29 serving as a laser resonator and crossing an m-n plane, the torn faces 27, 29 being different from cleavage planes such as c-plane, m-plane and a-plane; a laser waveguide extending in a direction of a cross line of the m-n plane and a semipolar plane 17a; a semiconductor region 19 including first through third regions 19b-19d extending in a direction of a waveguide vector LGV; an insulation film 31 having an opening 31a located on a ridge structure of the third region 19d in the semiconductor region 19; and an electrode 15 including a pad electrode 18 having first through third electrode parts 18b-18d provided on the first through the third regions 19b-19d in the semiconductor region 19, respectively. The first electrode part 18b includes an arm part 18b_ARM1 reaching an edge of the torn face 27. <P>COPYRIGHT: (C)2013,JPO&INPIT |
