发明名称 TUNNEL MAGNETORESISTANCE EFFECT ELEMENT, NON-LOCAL SPIN INJECTION ELEMENT, AND MAGNETIC HEAD USING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a low resistant and highly efficient spin injection element by highly orienting a barrier film having a small band gap in a direction (001) of a rock-salt structure. <P>SOLUTION: A tunnel magnetoresistance effect element 1 is formed by laminating a base film 300, a nonmagnetic seed film 310, a ferromagnetic film 305, a barrier film 307, a ferromagnetic film 308, and a protective film 309. For the nonmagnetic seed film 310, a material of face-centered cubic lattice whose lattice constant is smaller than &radic;2 times of a lattice constant of the ferromagnetic film 305. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013045800(A) 申请公布日期 2013.03.04
申请号 JP20110180588 申请日期 2011.08.22
申请人 HITACHI LTD 发明人 KUROSAKI YOSUKE;NISHIDE AKISATO
分类号 H01L43/08;G11B5/39;H01L21/8246;H01L27/105;H01L29/82;H01L43/10 主分类号 H01L43/08
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