| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device including an external capacitor. <P>SOLUTION: In a semiconductor device 10, an insulating film 12 is provided on a first surface 11c of a conductive member 11a having the first surface 11c and a second surface 11d. A semiconductor substrate 31 of a first conductivity type having a first surface 31a and a second surface 31b is provided so that the second surface 31b is located on the insulating film 12 side. On the first surface 31a side of the semiconductor substrate 31, an insulating gate field-effect transistor 21 is provided which has a gate electrode 35 formed via a gate insulating film 34 and first and second impurity diffusion layers 36 and 37 of a second conductivity type formed so as to sandwich the gate electrode 35. The first impurity diffusion layer 36 is electrically connected to the semiconductor substrate 31. <P>COPYRIGHT: (C)2013,JPO&INPIT |
