发明名称 |
RADIATION DETECTOR, MANUFACTURING METHOD OF RADIATION DETECTOR, RADIATION IMAGE PHOTOGRAPHING DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To prevent electrostatic breakdown of a photoelectric conversion element, and improve adhesion of a light-emitting layer and a photoelectric conversion substrate. <P>SOLUTION: A radiation detector 10A includes: a TFT switch 4 formed on a substrate 1; a semiconductor layer 6 formed on the substrate 1 as a photoelectric conversion element that generates charge corresponding to light radiated thereon; a planarized layer 34 formed on the semiconductor layer 6; an antistatic layer 32 formed in a mesh shape on the planarized layer 34; and a scintillator 70 which is formed on the planarized layer 34 and the antistatic layer 32 and emits light corresponding to the radiated radiation. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2013044724(A) |
申请公布日期 |
2013.03.04 |
申请号 |
JP20110185062 |
申请日期 |
2011.08.26 |
申请人 |
FUJIFILM CORP |
发明人 |
NAKATSUGAWA HARUYASU;SATO KEIICHIRO;NISHINO NAOYUKI;OTA YASUYOSHI |
分类号 |
G01T1/20;H01L27/144;H01L27/146;H01L31/09 |
主分类号 |
G01T1/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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