DIELECTRIC ISOLATION SUBSTRATE AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a dielectric isolation substrate and a semiconductor device that allow easy formation of a deep impurity diffusion layer.

SOLUTION: In a dielectric isolation substrate 10, an insulating film 12 having a first thickness t1 is provided on a semiconductor substrate 11. A semiconductor layer 13 of a first conductivity type having a second thickness t2 is provided on the insulating film 12. An impurity diffusion layer 14 of a second conductivity type is partially provided in contact with the insulating film 12 at a lower portion of the semiconductor layer 13.

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