| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device including a logic gate satisfying a small area, a low-power operation and a high-speed operation. <P>SOLUTION: A semiconductor device according to the present embodiment comprises a logic gate including more than one thin film transistor in which a gate electrode and a semiconductor layer are arranged on a substrate via a gate insulation film and a source electrode and a drain electrode are arranged to be connected with the semiconductor layer. At least in the first thin film transistor, the gate electrode is in an electrical floating state, and the semiconductor layer includes in a vertical direction with respect to a surface of the substrate, a first overlapping area sandwiched by the gate electrode and the source electrode, and a second overlapping area sandwiched by the gate electrode and the drain electrode. At least in the second thin film transistor, the gate electrode is connected to an input terminal, and the channel layer includes, in a vertical direction with respect to the surface of the substrate surface, a first overlapping area sandwiched by the gate electrode and the source electrode, and a second overlapping area sandwiched by the gate electrode and the drain electrode. <P>COPYRIGHT: (C)2013,JPO&INPIT |
