发明名称 SEMICONDUCTOR WAFER MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor wafer manufacturing method which enables transferring of a semiconductor wafer having been subject to patterning to a next process after grinding a rear face side of the semiconductor wafer with preventing warp and breakage of the semiconductor wafer. <P>SOLUTION: A semiconductor wafer manufacturing method comprises: attaching a pattern surface on a surface side of a semiconductor wafer 1 having been subject to patterning to a carrier plate 2; grinding a rear face 1b side of the semiconductor wafer 1 to a thickness of 50-120 &mu;m; subsequently vacuum suctioning the rear face 1b side to detach the semiconductor wafer 1 from the carrier plate 2; attaching a surface protection sheet 6 to the pattern surface on the surface 1a side; subsequently, releasing vacuum suction on the rear face 1b side to invert the semiconductor wafer 1; and attaching a rear face protection sheet 7 to the rear face 1b side. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013045885(A) 申请公布日期 2013.03.04
申请号 JP20110182589 申请日期 2011.08.24
申请人 MITSUBISHI MATERIALS TECHNO CORP 发明人 NEMOTO KOICHI;SATO FUMITAKA;SUGANO HIROTO;FUJITA YOSHIHIRO
分类号 H01L21/304 主分类号 H01L21/304
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