| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technology of plasma etching, which can stably subject only a specified local region of an object to be etched to plasma etching processing with superior reproducibility. <P>SOLUTION: A suction type and dry etching type plasma etching apparatus includes: a stage 3 which fixes an object 2 to be etched and is movable in a three-dimensional direction; a plasma generation tube 8 arranged so that one of the end parts is opposed to the object 2 to be etched which is fixed to the stage 3; a plasma generating power source 10; a pair of plasma generating electrodes 9 which are connected to the plasma generating power source 10, and are arranged outside and inside of the plasma generation tube 8; and exhaust devices 11 and 12 having an exhaust pipe connected to the other end part of the plasma generation tube. The plasma etching apparatus comprises: measuring means for measuring at least any one of pressure at both ends of the plasma generation tube 8 and pressure difference between both ends thereof, light emission of the plasma, and the types and the amount of reaction products contained in the plasma; and a computer 14 for controlling a plasma generating state based on information from the measuring means. <P>COPYRIGHT: (C)2013,JPO&INPIT |
