| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an ozone gas generation device in which the thickness of an oxide film, formed on the surface of a wafer when processing the wafer surface with ozone gas, can be adjusted to be thin while protecting the wafer surface against damage due to ultraviolet light, and to provide a silicon oxide film formation method, and an evaluation method of a silicon single crystal wafer ensuring stabilized measurement values of C-V characteristics when compared with prior art. <P>SOLUTION: The ozone gas generation device having an ultraviolet light source and a wafer mounting section, generating ozone gas by irradiating ultraviolet light from the light source in an oxygen-containing atmosphere, and processing a wafer on the wafer mounting section with ozone gas is provided, between the light source and the wafer on the wafer mounting section, with a light shielding plate which passes ozone gas thus generated and shields the ultraviolet light. <P>COPYRIGHT: (C)2013,JPO&INPIT |
