RESIST PATTERN FORMATION METHOD, AND MANUFACTURING METHOD OF MOLD FOR NANOIMPRINT, PHOTOMASK AND SEMICONDUCTOR DEVICE BY USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a resist pattern formation method allowing prevention of collapse and slide of a fine resist pattern by improving adhesion of a substrate to a resist film, and a manufacturing method of a mold for nanoimprint, a photomask and a semiconductor device by using it.

SOLUTION: In a resist pattern formation method, a negative type resist film is formed on a silane coupling layer comprising a silane compound having an energy ray-reactive group on a substrate; a latent image with a prescribed pattern shape is formed by irradiating the resist film with an energy ray; and a resist pattern is formed by developing the resist film irradiated with an energy ray. The resist film contains a resin component which can be bonded to an energy ray-reactive group by energy ray-irradiation and which is curable to some extent so as to remain on a substrate after developing step. An energy ray-reactive group is bonded to a resin component by energy ray-irradiation, and a silane coupling layer is adhered to a resist film.

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