发明名称 SUBSTRATE PROCESSING DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To improve vaporization efficiency of a liquid raw material and prevent deposition of particles. <P>SOLUTION: A substrate processing device includes a processing chamber for containing and processing a wafer, a bubbler 220a for vaporizing a liquid raw material through bubbling by a carrier gas, and a raw material gas supply pipe 213a for supplying raw material gas produced by the vaporization of the liquid raw material by the bubbler 220a into a processing chamber. The bubbler 220a includes a container for containing the liquid raw material, and a carrier gas supply pipe 237a having a tip thereof immersed in the liquid raw material contained in the container and supplying the carrier gas into the liquid raw material. In the substrate processing device, a diffusion plate 238 for horizontally diffusing the carrier gas supplied into the liquid raw material from the carrier gas supply pipe 237a is laid on the bottom in the bubbler 220a. The diffusion plate 238 is formed of a porous material. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013044043(A) 申请公布日期 2013.03.04
申请号 JP20110184405 申请日期 2011.08.26
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 KAMIMURA HIROYOSHI
分类号 C23C16/448 主分类号 C23C16/448
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