| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, which inhibit variation in resistance value of a resistive element. <P>SOLUTION: The semiconductor device manufacturing method comprises: forming a polysilicon film to become a resistive element; patterning the polysilicon film into a predetermined shape; etching CVD oxide films ZF1, ZF2 covering a patterned polysilicon film PSA to remove a part of the CVD oxide films on which a contact region is to be formed, with saving a part covering a polysilicon film part to become a resistor body; and implanting BF<SB POS="POST">2</SB>by using, as an implantation mask, the saved part of the CVD oxide films ZF1, ZF2, which cover the polysilicon film to form a high concentration region HC in the contact region. <P>COPYRIGHT: (C)2013,JPO&INPIT |
