摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming a protective polymeric coating on a silicon or silicon-carbide electrode of a plasma processing chamber. <P>SOLUTION: The polymeric coating provides protection to the underlying surface of the electrode with respect to exposure to constituents of plasma and gaseous reactants. The method can be performed during a process of cleaning the chamber 102, or during a process for etching a semiconductor substrate 10 in the chamber 102. <P>COPYRIGHT: (C)2013,JPO&INPIT |