| 摘要 |
Provided a display device including a thin film transistor. The thin film transistor includes a gate electrode, a gate insulating layer which covers the gate electrode, an oxide semiconductor film above the gate insulating layer, a source electrode and a drain electrode which are respectively provided in contact with a first region and a second region, which are provided in the upper surface of the oxide semiconductor film, and a channel protective film which is provided in contact with a third region between the first region and the second region. In plan view, a region of the oxide semiconductor film, which overlaps with the gate electrode, is smaller than the third region, and a portion of the oxide semiconductor film except for a portion which overlaps with the gate electrode has a resistance lower than the portion.
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