发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
A semiconductor device and a manufacturing method thereof is provided. The method comprises: providing a substrate for the semiconductor device with a gate structure and a first dielectric interlayer being formed thereon, said gate structure comprising a metal gate and an upper surface of said first dielectric interlayer being substantially flush with an upper surface of said gate; forming an interface layer to cover at least the upper surface of said gate such that the upper surface of said gate is protected from being oxidized; and forming a second dielectric interlayer on said interface layer.
|
申请公布号 |
US2013049078(A1) |
申请公布日期 |
2013.02.28 |
申请号 |
US201113316165 |
申请日期 |
2011.12.09 |
申请人 |
WANG XINPENG;HUANG YI;CHANG SHIH-MOU;SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION |
发明人 |
WANG XINPENG;HUANG YI;CHANG SHIH-MOU |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|