RESISTIVE RAM DEVICE HAVING IMPROVED SWITCHING CHARACTERISTICS

摘要

A resistive RAM device, comprising a first electrode, a second electrode, an electrolyte layer located between the first electrode and the second electrode. The first electrode has a central region surrounded by a peripheral region in a plane parallel to the electrolyte layer, and the first electrode comprises a protrusion extending into the electrolyte layer by a greater extent in the central region than in the peripheral region so that the electrolyte layer is thinner in the central region than in the peripheral region.