发明名称 |
SILICIDATION OF DEVICE CONTACTS USING PRE-AMORPHIZATION IMPLANT OF SEMICONDUCTOR SUBSTRATE |
摘要 |
Silicidation techniques with improved rare earth silicide morphology for fabrication of semiconductor device contacts. For example, a method for forming silicide includes implanting a silicon layer with an amorphizing species to fond an amorphous silicon region in the silicon layer and depositing a rare earth metal film on the silicon layer in contact with the amorphous silicon region. A silicide process is then performed to combine the rare earth metal film and the amorphous silicon region to form a silicide film on the silicon layer.
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申请公布号 |
US2013049200(A1) |
申请公布日期 |
2013.02.28 |
申请号 |
US201213598686 |
申请日期 |
2012.08.30 |
申请人 |
BESSER PAUL R.;CARRUTHERS ROY A.;D'EMIC CHRISTOPHER P.;LAVOIE CHRISTIAN;MURRAY CONAL E.;OHUCHI KAZUYA;SCERBO CHRISTOPHER;YANG BIN;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BESSER PAUL R.;CARRUTHERS ROY A.;D'EMIC CHRISTOPHER P.;LAVOIE CHRISTIAN;MURRAY CONAL E.;OHUCHI KAZUYA;SCERBO CHRISTOPHER;YANG BIN |
分类号 |
H01L29/43 |
主分类号 |
H01L29/43 |
代理机构 |
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代理人 |
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地址 |
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