| 摘要 |
A trench semiconductor power device and a fabrication method. The fabrication method includes: eroding an n epitaxial layer on an n+ substrate to form multiple gate trenches, and implanting with dopants to form source regions and P type base regions, respectively; eroding an interlayer dielectric to form a trench plug; and eroding an aluminum copper alloy to form a metal pad layer and wires. The method forms the source regions and the base regions by directly implanting, does not need source region masks and base region masks, has a simple fabrication process, and improves the quality and reliability of the device.
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