发明名称 |
Through Silicon Via Keep Out Zone Formation Method and System |
摘要 |
Keep out zones (KOZ) are formed for a through silicon via (TSV). A device can be placed outside a first KOZ of a TSV determined by a first performance threshold so that a stress impact caused by the TSV to the device is less than a first performance threshold while the first KOZ contains only those points at which a stress impact caused by the TSV is larger than or equal to the first performance threshold. A second KOZ for the TSV can be similarly formed by a second performance threshold. A plurality of TSVs can be placed in a direction that the KOZ of the TSV has smallest radius to a center of the TSV, which may be in a crystal orientation [010] or [100]. A plurality of TSV stress plug can be formed at the boundary of the overall KOZ of the plurality of TSVs. |
申请公布号 |
US2013049220(A1) |
申请公布日期 |
2013.02.28 |
申请号 |
US201113302653 |
申请日期 |
2011.11.22 |
申请人 |
HSIEH CHENG-CHIEH;TENG HUNG-AN;HOU SHANG-YUN;JENG SHIN-PUU;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
HSIEH CHENG-CHIEH;TENG HUNG-AN;HOU SHANG-YUN;JENG SHIN-PUU |
分类号 |
H01L23/48 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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