Zone smelted semiconductor doping

摘要

A bar of semiconductor material esp. silicon, is clamped vertically in a protective gas atmosphere which includes also its holders and is surrounded by an induction heating coil. The doping agent is cathodic spettered on to the molten zone from a metallic source forming a cathode the doping concentration being determined by the current density in the arc. High doping concns. (1019-1020 /c.c.) are more easily and reliably obtained from with the so called gas doping method.