发明名称 |
High Aspect Ratio Grid for Phase Contrast X-ray Imaging and Method of Making the Same |
摘要 |
Semiconductor substrates with high aspect ratio recesses formed therein are described. The high aspect ratio recesses have bottom surface profile characteristics that promote formation of initial growth sites of plated metal as compared to the side surfaces of the recesses. Processes for making and plating the recesses are also disclosed. The metal-plated high aspect ratio recesses can be used as X-ray gratings in Phase Contrast X-ray imaging apparatuses. |
申请公布号 |
US2013051530(A1) |
申请公布日期 |
2013.02.28 |
申请号 |
US201113221540 |
申请日期 |
2011.08.30 |
申请人 |
NEPOMNISHY MARK;SUGIMOTO SHINYA;KANEKO YASUHISA;FUJIFILM CORPORATION |
发明人 |
NEPOMNISHY MARK;SUGIMOTO SHINYA;KANEKO YASUHISA |
分类号 |
G21K1/06 |
主分类号 |
G21K1/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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