发明名称 INTEGRATED CIRCUIT WITH BACKSIDE PASSIVE VARIABLE RESISTANCE MEMORY AND METHOD FOR MAKING THE SAME
摘要 In one example, an integrated circuit includes memory control logic (e.g., CMOS logic circuit) on the front side of the integrated circuit die and passive variable resistance memory on the back side of the integrated circuit die. The passive variable resistance memory, also known as resistive non-volatile memory, may be for example memristors, phase-change memory, or magnetoresistive memory. Each memory cell of the passive variable resistance memory on the back side of the integrated circuit die is electrically connected to the memory control logic on the front side of the integrated circuit die through at least one through-die vertical interconnect accesses (vias). For example, the operation (e.g., write/read) of each passive variable resistance memory cell is controlled by the memory control logic. The integrated circuit may also include processor logic on the front side of the integrated circuit die operatively coupled to the memory control logic.
申请公布号 US2013051115(A1) 申请公布日期 2013.02.28
申请号 US201113216592 申请日期 2011.08.24
申请人 EN WILLIAM G.;WEISS DON R.;ADVANCED MICRO DEVICES, INC. 发明人 EN WILLIAM G.;WEISS DON R.
分类号 G11C11/56;H01L21/02;H01L45/00 主分类号 G11C11/56
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