| 摘要 |
The present invention provides a high voltage metal-oxide-semiconductor transistor device including a substrate, a deep well, and a doped region. The substrate and the doped region have a first conductive type, and the substrate has at least one electric field concentration region. The deep well has a second conductive type different from the first conductive type. The deep well is disposed in the substrate, and the doped region is disposed in the deep well. The doping concentrations of the doped region and the deep well in the electric field have a first ratio, and the doping concentrations of the doped region and the deep well outside the electric field have a second ratio. The first ratio is greater than the second ratio. |
