发明名称 TFT ARRAY STRUCTURE AND MANUFACTURING METHOD
摘要 <p>A TFT array structure and a manufacturing method. The structure includes: a first metal conductive layer (21), an interlayer (22), a second metal conductive layer (23), a passivation layer (24) and a black electrode layer (25). The first metal conductive layer (21) is formed on a substrate (20) by way of film formation and a first light cover; the interlayer (22) is formed on the first metal conductive layer (21) by way of deposition and a second light cover; the second metal conductive layer (23) is formed on the interlayer (22) by way of the etching of a third light cover; the passivation layer (24) is formed on the interlayer (22) and the second metal conductive layer (23) by way of deposition and the etching of a fourth light cover; and the black electrode layer (25) is formed on the passivation layer (24). The structure and manufacturing method reduce voltage loss and improve the performance of TFT liquid crystal displays.</p>
申请公布号 WO2013026229(A1) 申请公布日期 2013.02.28
申请号 WO2011CN81223 申请日期 2011.10.25
申请人 SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.;CHANG, WEI-HUNG;HE, CHENGMING 发明人 CHANG, WEI-HUNG;HE, CHENGMING
分类号 G02F1/1362;G02F1/1368 主分类号 G02F1/1362
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