| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which suppresses a defect of short-circuiting caused by a crack under a pad. <P>SOLUTION: Since an inter-layer insulating film 16 provided under a pad opening 18 is surrounded by a contact 17, a crack of the inter-layer insulating film 16 under the pad opening 18a, which has been generated during wire bonding, is not generated outside an outer periphery 17a of the contact 17. Therefore, the pad opening 18a does not cause short-circuiting with a metal film, such as an aluminum film or a polysilicon film, or a diffusion layer provided outside the outer periphery 17a via the crack. <P>COPYRIGHT: (C)2013,JPO&INPIT |
