| 摘要 |
<P>PROBLEM TO BE SOLVED: To efficiently obtain a semiconductor light-emitting device, for example, an end-face emission type superluminescent diode with high power. <P>SOLUTION: A semiconductor light-emitting device includes a substrate 101 and a stacked structure that is formed on the substrate 101 and is composed of a plurality of semiconductor layers including an optical guide layer 120. The stacked structure has a stripe-shaped optical waveguide 113 selectively provided on the top portion, and a light-emission end face 115 composed of the end face of the stacked structure. The angle θ formed between the stacked surface of the optical guide layer 120 and the light-emission end face 115 is not equal to 90°. <P>COPYRIGHT: (C)2013,JPO&INPIT |
